Thermal characterization, crystal field analysis and in-band pumped laser performance of Er doped NaY(WO(4))(2) disordered laser crystals

Er掺杂NaY(WO(4))(2)无序激光晶体的热特性、晶体场分析和带内泵浦激光性能

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作者:María Dolores Serrano, Concepción Cascales, Xiumei Han, Carlos Zaldo, Andrzej Jezowski, Piotr Stachowiak, Nikolay Ter-Gabrielyan, Viktor Fromzel, Mark Dubinskii

Abstract

Undoped and Er-doped NaY(WO4)2 disordered single crystals have been grown by the Czochralski technique. The specific heat and thermal conductivity (κ) of these crystals have been characterized from T = 4 K to 700 K and 360 K, respectively. It is shown that κ exhibits anisotropy characteristic of single crystals as well as a κ(T) behavior observed in glasses, with a saturation mean free phonon path of 3.6 Å and 4.5 Å for propagation along a and c crystal axes, respectively. The relative energy positions and irreducible representations of Stark Er(3+) levels up to (4)G(7/2) multiplet have been determined by the combination of experimental low (<10 K) temperature optical absorption and photoluminescence measurements and simulations with a single-electron Hamiltonian including both free-ion and crystal field interactions. Absorption, emission and gain cross sections of the (4)I(13/2)↔(4)I(15/2) laser related transition have been determined at 77 K. The (4)I(13/2) Er(3+) lifetime (τ) was measured in the temperature range of 77-300 K, and was found to change from τ (77K) ≈ 4.5 ms to τ (300K) ≈ 3.5 ms. Laser operation is demonstrated at 77 K and 300 K by resonantly pumping the (4)I(13/2) multiplet at λ≈1500 nm with a broadband (FWHM≈20 nm) diode laser source perfectly matching the 77 K crystal (4)I(15/2) → (4)I(13/2) absorption profile. At 77 K as much as 5.5 W of output power were obtained in π-polarized configuration with a slope efficiency versus absorbed pump power of 57%, the free running laser wavelength in air was λ≈1611 nm with the laser output bandwidth of 3.5 nm. The laser emission was tunable over 30.7 nm, from 1590.7 nm to 1621.4 nm, for the same π-polarized configuration.

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