Abstract
Here, we report a mixed GAI and MAI (MGM) treatment method by forming a 2D alternating-cation-interlayer (ACI) phase (n = 2) perovskite layer on the 3D perovskite, modulating the bulk and interfacial defects in the perovskite films simultaneously, leading to the suppressed nonradiative recombination, longer lifetime, higher mobility, and reduced trap density. Consequently, the devices' performance is enhanced to 24.5% and 18.7% for 0.12 and 64 cm2, respectively. In addition, the MGM treatment can be applied to a wide range of perovskite compositions, including MA-, FA-, MAFA-, and CsFAMA-based lead halide perovskites, making it a general method for preparing efficient perovskite solar cells. Without encapsulation, the treated devices show improved stabilities.