Formation of stable Si-O-C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions

低温条件下在氢终端硅(111)上形成稳定的Si-OC亚单层

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作者:Yit Lung Khung, Siti Hawa Ngalim, Andrea Scaccabarozzi, Dario Narducci

Abstract

In this letter, we report results of a hydrosilylation carried out on bifunctional molecules by using two different approaches, namely through thermal treatment and photochemical treatment through UV irradiation. Previously, our group also demonstrated that in a mixed alkyne/alcohol solution, surface coupling is biased towards the formation of Si-O-C linkages instead of Si-C linkages, thus indirectly supporting the kinetic model of hydrogen abstraction from the Si-H surface (Khung, Y. L. et al. Chem. - Eur. J. 2014, 20, 15151-15158). To further examine the probability of this kinetic model we compare the results from reactions with bifunctional alkynes carried out under thermal treatment (<130 °C) and under UV irradiation, respectively. X-ray photoelectron spectroscopy and contact angle measurements showed that under thermal conditions, the Si-H surface predominately reacts to form Si-O-C bonds from ethynylbenzyl alcohol solution while the UV photochemical route ensures that the alcohol-based alkyne may also form Si-C bonds, thus producing a monolayer of mixed linkages. The results suggested the importance of surface radicals as well as the type of terminal group as being essential towards directing the nature of surface linkage.

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